45 a 60 a new add-a-pak tm power modules thyristor/ thyristor irku/v41, 56 series bulletin i27134 rev. b 09/97 1 www.irf.com parameters irku/v41 irku/v56 units i t(av) @ 85c 45 60 a i t(rms) 70 95 a i tsm @ 50hz 850 1310 a @ 60hz 890 1370 a i 2 t @ 50hz 3.61 8.50 ka 2 s @ 60hz 3.30 7.82 ka 2 s i 2 ? t 36.1 85.0 ka 2 ? s v rrm range 400 to 1600 v t stg - 40 to 125 o c t j - 40 to125 o c these irku/v series of new add-a-paks use power thyristors in two circuit configurations. the semiconductor chips are electrically isolated from the base plate, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase bridges (irku+irkv) or 6-pulse midpoint connection bridge. these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, battery charge and dc motor speed control circuits. major ratings and characteristics features electrically isolated: dbc base plate 3500 v rms isolating voltage standard jedec package simplified mechanical designs, rapid assembly auxiliary cathode terminals for wiring convenience high surge capability wide choice of circuit configurations large creepage distances ul e78996 approved description
irku/v41, 56 series 2 bulletin i27134 rev. b 09/97 www.irf.com i t(av) max. average on-state 45 60 180 o conduction, half sine wave, current t c = 85 o c i t(rms ) max. rms on-state 70 95 dc current @ t c 82 80 c i tsm max. peak, one cycle 850 1310 t=10ms no voltage non-repetitive on-state 890 1370 t=8.3ms reapplied current 715 1100 t=10ms 100% v rrm 750 1150 t=8.3ms reapplied 940 1450 t=10ms t j = 25 o c, 985 1520 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing 3.61 8.56 t=10ms no voltage 3.30 7.82 t=8.3ms reapplied 2.56 6.05 t=10ms 100% v rrm 2.33 5.53 t=8.3ms reapplied 4.42 10.05 t=10ms t j = 25 o c, 4.03 9.60 t=8.3ms no voltage reapplied i 2 ? t max. i 2 ? t for fusing (1) 36.1 85.6 ka 2 ? s t=0.1 to 10ms, no voltage reapplied v t(to) max. value of threshold 0.88 0.85 low level (3) voltage (2) 0.91 0.88 high level (4) r t max. value of on-state 5.90 3.53 low level (3) slope resistance (2) 5.74 3.41 high level (4) v tm max. peak on-state i tm = p x i t(av) voltage i fm = p x i f(av) di/dt max. non-repetitive rate t j = 25 o c, from 0.67 v drm , of rise of turned on 150 a/s i tm = p x i t(av) , i g = 500ma, current t r < 0.5 s, t p > 6 s i h max. holding current 200 t j = 25 o c, anode supply = 6v, resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v,resistive load v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-state voltage, i drm code peak reverse voltage peak reverse voltage gate open circuit 125c -vvvma 04 400 500 400 08 800 900 800 12 1200 1300 1200 16 1600 1700 1600 (1) i 2 t for time t x = i 2 ? t x ? t x . (2) average power = v t(to) x i t(av) + r t x ( i t(rms) ) 2 (3) 16.7% x p x i av < i < p x i av (4) i > p x i av electrical specifications voltage ratings type number parameters irku/v41 irku/v56 units conditions a irku/v41, 56 15 on-state conduction ka 2 s v m w 1.81 1.54 v ma sinusoidal half wave, initial t j = t j max. a t j = t j max t j = t j max t j = 25c initial t j = t j max.
irku/v41, 56 series 3 bulletin i27134 rev. b 09/97 www.irf.com t j junction operating temperature range t stg storage temper. range - 40 to 125 r thjc max. internal thermal resistance, junction 0.23 0.20 per module, dc operation to case r thcs typical thermal resistance case to heatsink t mounting torque 10% to heatsink busbar 3 wt approximate weight 83 (3) g (oz) case style to-240aa jedec thermal and mechanical specifications parameters irku/v41 irku/v56 units conditions - 40 to 125 0.1 5 (5) available with dv/dt = 1000v/ m s, to complete code add s90 i.e. irku41/16s90. a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound c k/w nm mounting surface flat, smooth and greased. flatness < 0.03 mm; roughness < 0.02 mm i rrm max. peak reverse and i drm off-state leakage current 15 ma t j = 125 o c, gate open circuit at v rrm , v drm v ins rms isolation voltage 2500 (1 min) 50 hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt max. critical rate of rise t j = 125 o c, linear to 0.67 v drm , of off-state voltage (5) gate open circuit triggering p gm max. peak gate power 10 10 p g(av) max. average gate power 2.5 2.5 i gm max. peak gate current 2.5 2.5 a -v gm max. peak negative gate voltage v gt max. gate voltage 4.0 t j = - 40c required to trigger 2.5 t j = 25c 1.7 t j = 125c i gt max. gate current 270 t j = - 40c required to trigger 150 ma t j = 25c 80 t j = 125c v gd max. gate voltage that will not trigger i gd max. gate current that will not trigger parameters irku/v41 irku/v56 units conditions 0.25 v 6ma anode supply = 6v resistive load anode supply = 6v resistive load w v 10 t j = 125 o c, rated v drm applied t j = 125 o c, rated v drm applied parameters irku/v41, 56 units conditions blocking v 500 v/ m s
irku/v41, 56 series 4 bulletin i27134 rev. b 09/97 www.irf.com d r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc) sine half wave conduction rect. wave conduction devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irku/v41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34 irku/v56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 c/w all dimensions in millimeters (inches) irku../.. (*) irkv../.. (*) outlines table (*) for terminals connections, see circuit configurations table 30 0.5 (1.18 0.02) 29 0.5 (1.13 0.02) 6.1 0.3 (0.24 0.01) 24 0.5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 (1.18 0.04) faston tab. 2.8 x 0.8 20.5 0.75 (0.81 0.03) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) 5.8 0.2 5 (0.16 0.01) 4 pitc h 4. 0 0.2 (0.23 0.01) (0.25 0.01) 6.3 0.3 576 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0 .02) (0.79 0.02) 1 circuit configurations table irkv irku k1 g1 (4) (5) + k2 g2 - - (1) (2) (3) (7) (6) + k2 g2 - k1 g1 + (1) (2) (4) (5) (7) (6) (3) note: to order the optional hardware see bulletin i27900
irku/v41, 56 series 5 bulletin i27134 rev. b 09/97 www.irf.com irk u 56 / 16 s90 device code 1 2 34 5 1 - module type 2 - circuit configuration (see circuit configuration table) 3 - current code 4 - voltage code (see voltage ratings table) 5 - dv/dt code: s90 = dv/dt 1000 v/s no letter = dv/dt 500 vs ordering information table fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 80 90 100 110 120 130 0 102030405 0 maximum allowable case temperature ( c ) 30 60 90 120 180 average on-sta te curr en t (a) conduction angle irk.41.. series r (dc) = 0.46 k/w thjc 80 90 100 110 120 130 0 2040608 0 dc 30 60 90 120 180 averag e on -state current (a) maximum allowable case temperature ( c ) conduction period irk.41.. series r (dc) = 0.46 k/w thjc 0 10 20 30 40 50 60 70 0 102030405 0 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w ) avera ge on-state current (a) irk.41.. series per junct ion t = 125c j 0 20 40 60 80 100 0204060 80 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.41.. series per junction t = 125c j
irku/v41, 56 series 6 bulletin i27134 rev. b 09/97 www.irf.com fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state power loss characteristics (single phase bridge irku+irkv) fig. 8 - on-state power loss characteristics 300 400 500 600 700 800 110100 number of equal amplitude half cycle current pulses (n ) at any rated load condition and with rate d v applie d fo llo wing sur ge. rrm peak half sine wave on-state current (a) in itial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j irk.41.. series per junction 300 400 500 600 700 800 900 0.01 0.1 1 pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. contro l initial t = 125 c no v oltage re applied rated v reapplied rrm j of conduction may not be maintained . peak half sine wave on-state current (a ) irk.41.. series per junction 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 50 100 150 200 250 300 350 0 20406080100 total output curren t (a) maximum total power loss (w) 180 (s ine) 180 (rec t) 2 x irk.41.. series single phase bridge connected t = 125 c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 . 3 k / w 0 . 5 k / w 0 . 7 k / w 1 k / w 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 total output current (a) maximum total power loss ( w) 60 (rect) 3 x irk.41.. series 6-pulse midpoint connection bridge t = 125 c j i o
irku/v41, 56 series 7 bulletin i27134 rev. b 09/97 www.irf.com fig. 10 - current ratings characteristics fig. 9 - current ratings characteristics fig. 13 - maximum non-repetitive surge current fig. 14 - maximum non-repetitive surge current fig. 11 - on-state power loss characteristics fig. 12 - on-state power loss characteristics 70 80 90 100 110 120 130 0 2040608010 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period irk.56.. series r (dc) = 0.40 k/w thjc 70 80 90 100 110 120 130 0 1020304050607 0 maximu m allow able case t emper ature ( c ) 30 60 90 120 180 average on-state current (a) conduction angle irk.56.. series r (dc) = 0.40 k/w thjc 0 10 20 30 40 50 60 70 80 90 0 10203040506 0 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w ) average on-state current (a) irk.56.. series per junction t = 125c j 0 20 40 60 80 100 120 02040608010 0 dc 180 120 90 60 30 rms limit conduction period m aximum average on -state power loss (w ) average on-state current (a) irk.56.. series per junction t = 125c j 500 600 700 800 900 1000 1100 1200 110100 number of equal amplitude half cycle current pulses (n ) initial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j peak half sine wave on-state current (a ) irk.56.. series per junction 400 600 800 1000 1200 1400 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge curren t versus pulse train duration. contro l initial t = 125 c no voltage reapplied rated v reapplied of conduction may not be maintained . j rrm irk.56.. series per junction
irku/v41, 56 series 8 bulletin i27134 rev. b 09/97 www.irf.com fig. 15 - on-state power loss characteristics (single phase bridge irku+irkv) fig. 16 - on-state power loss characteristics fig. 17 - on-state voltage drop characteristics fig. 18 - on-state voltage drop characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 2 k / w 1 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w 0 . 2 k / w 0 50 100 150 200 250 300 350 400 450 0 20 40 60 80 100 120 140 total output current (a) maximum total power loss (w) 180 (sine) 180 (rec t) 2 x irk.56.. series sin gle phase bridg e connected t = 125 c j 0 20406080100120140 maximum allowable ambient temperature ( c ) r = 0 . 1 k / w - d e l t a r 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w 0. 2 k/ w t h s a 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 total output current (a) maximum total power loss (w) 60 (rect) 3 x irk.56.. series 6-pulse midpoint con nection bridge t = 125 c j i o 1 10 100 1000 0.511.522.533.544 .5 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.56.. series per junction 1 10 100 1000 0123456 7 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.41.. series per junct ion
irku/v41, 56 series 9 bulletin i27134 rev. b 09/97 www.irf.com fig. 20 - recovery current characteristics fig. 19 - recovery charge characteristics fig. 21 - thermal impedance z thjc characteristics fig. 22 - gate characteristics 30 40 50 60 70 80 90 100 110 10 20 30 40 50 60 70 80 90 10 0 maximum reverse recovery current - irr (a ) rate of fall of forward curr en t - di/dt (a/ s) 100 a 50 a i = 200 a tm 20 a 10 a irk.41.. series irk.56.. series t = 125 c j 100 150 200 250 300 350 400 450 500 10 20 30 40 50 60 70 80 90 10 0 100 a 50 a rate of fall of on-sta te current - di/dt (a/ s) maximum reverse recovery charge - qrr ( c ) i = 200 a tm 20 a 10 a irk.41.. series irk.56.. series t = 125 c j 0.01 0.1 1 0.001 0.01 0.1 1 1 0 square wave pulse duration (s) thjc transient thermal impedance z (k/w ) per junction steady state value: r = 0.46 k/w r = 0.40 k/w (dc operation) irk.41.. series irk.56.. series thjc thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 100 0 (b) (a) rectangular gate pulse (4) (3) (2) (1) (1) pgm = 100 w, tp = 500 s (2) pgm = 50 w, tp = 1 ms (3) pgm = 20 w, tp = 25 ms (4) pgm = 10 w, tp = 5 ms instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 25 c tj = 12 5 c a)recommended load line for b)recom mended load l ine for vgd igd fr equency limited by pg(av) rated di/dt: 20 v, 30 ohms tr = 0.5 s, t p >= 6 s <= 30% rated di/dt: 20 v, 65 ohms tr = 1 s, tp >= 6 s irk.41../.56.. series
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